Laser stimulated low-temperature crystallization of amorphous silicon

被引：0
作者：
S. A. Avsarkisov
Z. V. Jibuti
N. D. Dolidze
B. E. Tsekvava
机构：
[1] Tbilisi State University,
来源：
Technical Physics Letters | 2006年 / 32卷
关键词：
64.10.+h; 61.50.Ks;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Laser annealing of amorphous silicon (a-Si) at different initial temperatures (77 and 300 K) has been studied. It is established that the laser-stimulated crystallization of silicon is possible at relatively low temperatures. A theoretical model is proposed, which explains this phenomenon by melting via the electron mechanism followed by recrystallization.
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页码：259 / 261
页数：2
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