Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3

被引：0
作者：
M HAJ LAKHDAR
T LARBI
B KHALFALLAH
B OUNI
M AMLOUK
机构：
[1] Université de Tunis El Manar,Unité de Physique des Dispositifs a Semi
[2] Université de Tunis El Manar,Conducteurs, Faculté des Sciences de Tunis
来源：
Bulletin of Materials Science | 2016年 / 39卷
关键词：
X-ray diffraction; a.c. conductivity; dielectric properties; complex electric modulus;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This work highlights some physical properties of Sb2O3 thin films obtained through heat treatment of Sb2S3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb2O3 thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.
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页码：1801 / 1808
页数：7
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