Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling

被引：0
作者：
Takeda H. [1 ]
Mori N. [1 ]
Hamaguchi C. [1 ]
机构：
[1] Department of Electronic Engineering, Osaka University, 2–1 Yamada-oka, Suita City, Osaka
来源：
Journal of Computational Electronics | 2002年 / 1卷 / 4期
关键词：
Monte Carlo simulation; pseudo-potential method; SOI MOSFET;
D O I：
10.1023/A:1022988921236
中图分类号：
学科分类号：
摘要：
Effects of conduction-band non-parabolicity on electron transport properties in silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs) are studied by performing Monte Carlo simulation with a full-band modeling. An empirical pseudo-potential method is adopted for evaluating the two-dimensional electronic states in SOI MOSFETs. SOI-film thickness dependence of phonon-limited mobility, drift-velocity and subband occupancy is calculated and the results are compared with those of a simple effective mass approximation. The non-parabolicity effects are found to play an important role in 4-fold valleys under higher applied electric fields or at higher temperatures. © 2002, Kluwer Academic Publishers.
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页码：467 / 474
页数：7
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