Intraband optical transitions of holes in strained SiGe quantum wells

被引：0
|
作者：
A. I. Yakimov
V. V. Kirienko
V. A. Timofeev
A. I. Nikiforov
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
JETP Letters | 2013年 / 97卷
关键词：
JETP Letter; Heavy Hole; Light Hole; Hole Band; Intersubband Transition;
D O I：
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学科分类号：
摘要：
Optical absorption spectra of polarized infrared radiation in p-type SiGe quantum-well structures have been investigated. Three types of structures with different magnitudes and signs of biaxial elastic strains have been studied. The light absorption factor has been found to double in the region of interband transitions under the in-plane tensile strain of the quantum-well heterojunction. The results are attributed to a change in the order of light- and heavy-hole bands caused by the tensile strain and to the formation of the ground state of charge carriers in the light-hole band.
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页码：159 / 162
页数：3
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