Intraband optical transitions of holes in strained SiGe quantum wells

被引：0
|
作者：
A. I. Yakimov
V. V. Kirienko
V. A. Timofeev
A. I. Nikiforov
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
JETP Letters | 2013年 / 97卷
关键词：
JETP Letter; Heavy Hole; Light Hole; Hole Band; Intersubband Transition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Optical absorption spectra of polarized infrared radiation in p-type SiGe quantum-well structures have been investigated. Three types of structures with different magnitudes and signs of biaxial elastic strains have been studied. The light absorption factor has been found to double in the region of interband transitions under the in-plane tensile strain of the quantum-well heterojunction. The results are attributed to a change in the order of light- and heavy-hole bands caused by the tensile strain and to the formation of the ground state of charge carriers in the light-hole band.
引用
收藏
页码：159 / 162
页数：3
相关论文
共 50 条
  • [21] Quantum confinement effects in strained SiGe/Si multiple quantum wells
    Cheng, Buwen
    Li, Daizong
    Huang, Changjun
    Zhang, Chunhui
    Yu, Zhuo
    Yu, Jinzhong
    Wang, Qiming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (04): : 313 - 316
  • [22] OPTICAL ORIENTATION OF HOLES AND ELECTRONS IN STRAINED LAYER INGAAS/GAAS QUANTUM-WELLS
    VASILEV, AM
    DAIMINGER, F
    STRAKA, J
    FORCHEL, A
    KOCHERESHKO, VP
    SANDLER, GL
    URALTSEV, IN
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (01) : 97 - 100
  • [23] Quantum tailoring of optical transitions in InxGa1-x As/AlAs strained quantum wells
    Jancu, JM
    Pellegrini, V
    Colombelli, R
    Beltram, F
    Mueller, B
    Sorba, L
    Franciosi, A
    APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2621 - 2623
  • [24] Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells
    Carroll, Lee
    Imbert, Florian
    Sigg, Hans
    Sueess, Martin
    Mueller, Elisabeth
    Virgilio, Michele
    Pizzi, Giovanni
    Rossbach, Peggy
    Chrastina, Daniel
    Isella, Giovanni
    APPLIED PHYSICS LETTERS, 2011, 99 (03)
  • [25] Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach
    Virgilio, Michele
    Grosso, Giuseppe
    PHYSICAL REVIEW B, 2009, 80 (20)
  • [26] Uniaxially tensile strained Ge/SiGe coupled quantum wells
    Zhang, Yi
    Sun, Junqiang
    OPTOELECTRONIC MATERIALS AND DEVICES (ICOMD 2020), 2021, 11767
  • [27] Lateral transport in strained SiGe quantum wells doped with boron
    Kagan, MS
    Altukhov, IV
    Korolev, KA
    Orlov, DV
    Sinis, VP
    Thomas, SG
    Wang, KL
    Yassievich, IN
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 211 (01): : 495 - 499
  • [28] Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
    Bonfanti, M.
    Grilli, E.
    Guzzi, M.
    Virgilio, M.
    Grosso, G.
    Chrastina, D.
    Isella, G.
    von Kaenel, H.
    Neels, A.
    PHYSICAL REVIEW B, 2008, 78 (04):
  • [29] Single and double hole quantum dots in strained Ge/SiGe quantum wells
    Hardy, Will J.
    Harris, C. Thomas
    Sue, Yi-Hsin
    Chuang, Yen
    Moussa, Jonathon
    Maurer, Leon N.
    Li, Jiun-Yun
    Lu, Tzu-Ming
    Luhman, Dwight R.
    NANOTECHNOLOGY, 2019, 30 (21)
  • [30] Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells
    N. V. Pavlov
    G. G. Zegrya
    A. G. Zegrya
    V. E. Bugrov
    Semiconductors, 2018, 52 : 195 - 208
12345