AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

被引：0

作者：

M. A. Sukhanov

A. K. Bakarov

D. Yu. Protasov

K. S. Zhuravlev

机构：

[1] Rzhanov Institute of Semiconductor Physics,

[2] Siberian Branch,undefined

[3] Russian Academy of Sciences,undefined

[4] Novosibirsk State University,undefined

[5] Novosibirsk State Technical University,undefined

来源：

Technical Physics Letters | 2020年 / 46卷

关键词：

InSb; detector; dark current; molecular-beam epitaxy; IR photodetector.;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：154 / 157

页数：3

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