Photon-assisted electron transport through a quantum point contact in a microwave field
被引:0
|
作者:
O. A. Tkachenko
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机构:Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
O. A. Tkachenko
V. A. Tkachenko
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机构:Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
V. A. Tkachenko
Z. D. Kvon
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机构:Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
Z. D. Kvon
机构:
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
来源:
JETP Letters
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2015年
/
102卷
关键词:
JETP Letter;
Open Regime;
Microwave Field;
Quantum Point Contact;
Tunneling Regime;
D O I:
暂无
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学科分类号:
摘要:
It has been shown by the numerical solution of the time-dependent Schrödinger equation that the transmittance of an electron through a smooth one-dimensional barrier in a microwave field can increase by orders of magnitude in the tunneling regime and decrease strongly in the open regime. The leading contribution comes from transitions with absorption or emission of a few photons. The discovered effect can explain a recently observed strong increase in the conductance of a quantum point contact under microwave irradiation.