Large crystalline grain growth using current-induced Joule heating

被引：0

作者：

T. Sameshima

K. Ozaki

N. Andoh

机构：

[1] Tokyo University of Agriculture and Technology,

[2] Tokyo 184-8588,undefined

[3] Japan (Fax: +42/388-7436,undefined

[4] E-mail: tsamesim@cc.tuat.ac.jp),undefined

来源：

Applied Physics A | 2000年 / 71卷 / 1期

关键词：

PACS: 61.50.-f; 72.20.-I; 73.20.Hb; 61.16.Bg; 73.50.Gr;

D O I：

10.1007/PL00021082

中图分类号：

学科分类号：

摘要：

Electrical-current-induced Joule heating was applied to crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. 3-μs-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with 28-ns-pulsed excimer laser melted films partially and reduced its resistance. Complete melting for 12 μs and a low cooling rate at 1.1×108 K/s were achieved by Joule heating from electrical energy accumulated in the capacitance at 0.22 μF. For 7.4×1017 cm-3 phosphorus-doped films, analysis of temperature change in the electrical conductivity gave that the density of defect states localized at grain boundaries was 1.5×1012 cm-2. Formation of 3.5-μm-long crystalline grains was observed by transmission electron micrograph. Preferential crystalline orientation was (110).

引用

页码：1 / 6

页数：5