Study on Structural and Dielectric Properties of Ultra-Low-Fire Integratable Dielectric Film for High-Frequency and Microwave Application

被引:0
|
作者
Sheng Qu
Jihua Zhang
Kaituo Wu
Lei Wang
Hongwei Chen
机构
[1] University of Electronic Science & Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices
[2] University of Electronic Science & Technology of China,Collaboration Innovation Center of Electric Materials and Devices
来源
Journal of Electronic Materials | 2018年 / 47卷
关键词
Ultra-low-fire; high-frequency; microwave application dielectric properties; thin film; low processing temperature;
D O I
暂无
中图分类号
学科分类号
摘要
In this study, ultra-low-fire ceramic composites of Zn2Te3O8-30 wt.%TiTe3O8 (ZTT) were prepared by a solid-state reaction method. Densified at 600°C, the best microwave dielectric properties at 8.5 GHz were measured with the εr, tanδ, Q × f, and τf as 25.6, 1.5 × 10−4, 56191 GHz and 1.66 ppm/°C, respectively. Thin films of ultra-low-fire ZTT were prepared by a radio-frequency magnetron sputtering method. ZTT films which deposited on Au/NiCr/SiO2/Si (100) substrates at 200°C showed good adhesion. From ultra-low-fire ceramic to ultra-low-fire ZTT thin films, the latter maintained all the good high-frequency dielectric properties of the former: high dielectric constant (εr ∼ 25) and low dissipation factor (tanδ < 5×10−3), low leakage current density (∼ 10−9 A/cm2) and ultra low processing temperature. These excellent properties of the ultra-low-fire ZTT thin film make it possible to be integrated in MMIC and be applied in the research of GaN and GaAs MOSFET devices.
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页码:1944 / 1951
页数:7
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