Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

被引：0
作者：
Ming-Hui Chiu
Chendong Zhang
Hung-Wei Shiu
Chih-Piao Chuu
Chang-Hsiao Chen
Chih-Yuan S. Chang
Chia-Hao Chen
Mei-Yin Chou
Chih-Kang Shih
Lain-Jong Li
机构：
[1] Institute of Atomic and Molecular Sciences,Department of Physics
[2] Academia Sinica,Physical Sciences and Engineering Division
[3] University of Texas at Austin,undefined
[4] National Synchrotron Radiation Research Center,undefined
[5] School of Physics,undefined
[6] Georgia Institute of Technology,undefined
[7] Deapartment of Physics,undefined
[8] National Taiwan University,undefined
[9] King Abdullah University of Science and Technology,undefined
来源：
Nature Communications | / 6卷
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摘要：
The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.
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