Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

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作者：
Hongjian Li
Panpan Li
Junjie Kang
Jiianfeng Ding
Jun Ma
Yiyun Zhang
Xiaoyan Yi
Guohong Wang
机构：
[1] Semiconductor Lighting R&D Center,
[2] Institute of Semiconductors,undefined
[3] Chinese Academy of Sciences,undefined
[4] State Key Laboratory on Integrated Optoelectronics & Optoelectronic System Laboratory,undefined
[5] Institute of Semiconductors,undefined
[6] Chinese Academy of Sciences,undefined
来源：
Scientific Reports | / 6卷
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摘要：
We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color rendering index of 69.3 have been achieved. Temperature-dependent photoluminescence measurements reveal a strong carriers localization effect of the InGaN QDs layer by obvious blue-shift of emission peak from 50 K to 300 K. The broadband luminescence spectrum is believed to be attributed to the injected carriers captured by the different localized states of InGaN QDs with various sizes, shapes and indium compositions, leading to a full visible color emission. The successful realization of our broadband InGaN QDs LEDs provide a convenient and practical method for the fabrication of GaN-based monolithic full-color LEDs in wafer scale.
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