Design and analysis of double-gate junctionless vertical TFET for gas sensing applications

被引：0
作者：
Sonal Singh
Mamta Khosla
Girish Wadhwa
Balwinder Raj
机构：
[1] NIT Jalandhar,Nanoelectronics Research Lab, Department of Electronics and Communication Engineering
来源：
Applied Physics A | 2021年 / 127卷
关键词：
Vertical TFET; Junction-less; Gas sensor; Gate stack; BTBT;
D O I：
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学科分类号：
摘要：
In this present study, junctionless vertical tunnel field-effect transistor (JL-VTFET) with catalytic metals as gate contacts is proposed for gas sensing applications. The vertical double-sided gate architecture provides better gate controllability over conventional TFETs for band-to-band tunneling (BTBT). An architecture for n-channel JL-VTFET with Palladium (Pd) as gate metal is analyzed for Hydrogen sensing, while Cobalt (Co) and Molybdenum (Mo) metals as gate contacts are analyzed for Ammonia sensing. P + pockets are created near the source region by using work function values befitting the aforementioned catalytic metals. Characteristics of the proposed structure are studied considering the electric field, surface potential, and energy bandgap graphs concerning adsorption of gas molecules, using Silvaco ATLAS TCAD simulator. Simulation results of JL-VTFET with 50-nm gate length show good sensitivity calibrations (SIdoff ~ 1.99 × 103, 2.09 × 103 and 6.43 × 102) and high Idon/Idoff ratio (~ 4.3 × 109, ~ 2.01 × 107 and 1.33 × 1012) for Co, Mo and Pd as gate metals, respectively
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[1]  
Jayaswal N(2019)Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing Superlattices Microstruct. 125 256-270
[2]  
Raman A(1986)Gas sensors based on catalytic metal-gate field-effect devices Sens. Actuators 10 399-421
[3]  
Kumar N(2010)Dual gate field effect transistor hydrogen gas sensor with thermal compensation Jpn. J. Appl. Phys. 49 024206-1-024206-5
[4]  
Singh S(2001)Low temperature hydrogen detection at high concentrations: comparison of platinum and iridium Sens. Actuators B 80 163-168
[5]  
Lundstrom I(2012)Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs IEEE Electron Device Lett. 33 336-338
[6]  
Armgarth M(2020)Vertical P-TFET with a P-Type SiGe Pocket IEEE Trans. Electron Devices 67 1480-1484
[7]  
Spetz A(2016)Vertical tunnel FET: design optimization with triple metal-gate layers IEEE Trans. Electron Devices 63 5030-5035
[8]  
Winquist F(2013)Gate-all-around nanowire MOSFET with catalytic metal gate for gas sensing applications IEEE Trans. Nanotechnol. 12 939-944
[9]  
Tsukada K(2006)Gate stack technology for nanoscale devices Mater. Today 9 32-40
[10]  
Kariya M(2013)Work-function variation effects of tunneling field-effect transistors (TFETs) IEEE Electron Device Lett. 34 942-944
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