Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

被引：0
|
作者：
N. Piluso
E. Fontana
M. A. Di Stefano
G. Litrico
S. Privitera
A. Russo
S. Lorenti
S. Coffa
F. La Via
机构：
[1] STMicroelectronics,
[2] IMM-CNR,undefined
来源：
MRS Advances | 2016年 / 1卷 / 55期
关键词：
D O I：
10.1557/adv.2016.366
中图分类号：
学科分类号：
摘要：
In this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence (μPL) and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. The role of the annealing process has been carefully investigated by using different temperatures. It appears fundamental for the restoring of the crystal damage. The effect of the ion implantation dose has been investigated as well. By reducing the source ion implanted dose a large decrease of point defects has been detected and a considerable improvement of the electrical characteristic of the DIMOSFET has been observed.
引用
收藏
页码：3673 / 3678
页数：5
相关论文
共 50 条
  • [21] Enhancing oxidation rate of 4H-SiC by oxygen ion implantation
    Liu, Min
    Zhang, Shuyuan
    Yang, Xiang
    Chen, Xue
    Fan, Zhongchao
    Wang, Xiaodong
    Yang, Fuhua
    Ma, Chao
    He, Zhi
    JOURNAL OF MATERIALS SCIENCE, 2019, 54 (02) : 1147 - 1152
  • [22] Ohmic contacts of 4H-SiC on ion-implantation layers
    Wang Shou-Guo
    Zhang Yan
    Zhang Yi-Men
    Zhang Yu-Ming
    CHINESE PHYSICS B, 2010, 19 (01)
  • [23] ANNEALING CHARACTERISTIC VARIATION OF 4H-SiC DIODE BY ION IMPLANTATION
    Nakamura, T.
    Watabe, Y.
    Tajima, T.
    Satoh, M.
    Nakamura, T.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28, 2010, 28 : 85 - 88
  • [24] Ion implantation -: Tool for fabrication of advanced 4H-SiC devices
    Kalinina, EV
    Kholujanov, G
    Gol'dberg, Y
    Blank, T
    Onushkin, G
    Strel'chuk, A
    Violina, G
    Kossov, V
    Yafaev, R
    Hallén, A
    Konstantinov, A
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 835 - 838
  • [25] Characterization of phosphorus implantation in 4H-SiC
    Khemka, V
    Patel, R
    Ramungul, N
    Chow, TP
    Ghezzo, M
    Kretchmer, J
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 167 - 174
  • [26] Characterization of phosphorus implantation in 4H-SiC
    V. Khemka
    R. Patel
    N. Ramungul
    T. P. Chow
    M. Ghezzo
    J. Kretchmer
    Journal of Electronic Materials, 1999, 28 : 167 - 174
  • [27] Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
    Nagano, M.
    Tsuchida, H.
    Suzuki, T.
    Hatakeyama, T.
    Senzaki, J.
    Fukuda, K.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 477 - 480
  • [28] Ion-implantation in bulk semi-insulating 4H-SiC
    Rao, MV
    Tucker, JB
    Ridgway, MC
    Holland, OW
    Papanicolaou, N
    Mittereder, J
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 752 - 758
  • [29] ANNEALING CHARACTERICTICS OF 4H-SiC BY LOW CONCENTRATION Al ION IMPLANTATION
    Takenaka, K.
    Tajima, T.
    Satoh, M.
    Nakamura, T.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, 2009, (27): : 101 - 104
  • [30] Ion-implantation in bulk semi-insulating 4H-SiC
    Rao, Mulpuri V.
    Tucker, Jesse B.
    Ridgway, M.C.
    Holland, O.W.
    Papanicolaou, N.
    Mittereder, J.
    Journal of Applied Physics, 86 (02):
12345