Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor

被引：0
作者：
Jungmin Park
Hyojung Kim
Pyungho Choi
Bohyeon Jeon
Jongyoon Lee
Changyong Oh
Bosung Kim
Byoungdeog Choi
机构：
[1] Samsung Electronics Co.,Foundry Business
[2] Ltd.,Department of Semiconductor and Display Engineering
[3] Sungkyunkwan University,Department of Applied Physics
[4] Korea University,Department of Electrical and Computer Engineering
[5] Sungkyunkwan University,undefined
来源：
Electronic Materials Letters | 2021年 / 17卷
关键词：
Al; O; ALD; PEALD; Carbon; Hydrogen; a-IGZO;
D O I：
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学科分类号：
摘要：
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页码：299 / 306
页数：7
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