Analysis of the Results of Silicon Sputtering Simulation as Functions of Different Ar–Si Potentials

被引：0

作者：

A. A. Sycheva

E. N. Voronina

A. P. Palov

机构：

[1] Faculty of Physics,

[2] Lomonosov Moscow State University,undefined

[3] Moscow State University,undefined

[4] Skobeltsyn Institute of Nuclear Research,undefined

来源：

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2019年 / 13卷

关键词：

low-κ materials; porosity; physical sputtering; simulation; molecular dynamics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1272 / 1279

页数：7

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