Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

[1] Shestakov V.A.(2021)Transformation of the phase diagram of a ternary system with stoichiometric compounds with varying its state parameters Russ. J. Inorg. Chem. 66 401-404

[2] Kosyakov V.I.(1998)Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties Semiconductors 32 457-465

[3] Mil’vidskii M.G.(2021)A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition Tech. Phys. Lett. 47 96-98

[4] Chaldyshev V.V.(2019)Cascade solar cells based on GaP/Si/Ge nanoheterostructures Tech. Phys. Lett. 45 7-9

[5] Gudovskikh A.S.(2016)Diffusion of phosphorus in arsenic and boron, doped silicon Usp. Fiz. Nauk 186 801-852

[6] Kudryashov D.A.(2019)Simulation of the concentration dependence of boron diffusion in silicon Mater. Phys. Chem. 1 1-6

[7] Baranov A.I.(1995)Minority-charge-carrier mobility at low injection level in semiconductors Appl. Phys. Lett. 66 1415-1471

[8] Lunin L.S.(2004)Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl Semiconductors 38 258-261

[9] Lunina M.L.(2011) diffusion or ion implantation and annealing Semiconductors 45 436-444

[10] Pashchenko A.S.(2013)A model of high- and low-temperature phosphorus diffusion in silicon by a dual pair mechanism Energy Procedia 38 263-269

[1] Shestakov V.A.(2021)Transformation of the phase diagram of a ternary system with stoichiometric compounds with varying its state parameters Russ. J. Inorg. Chem. 66 401-404

[2] Kosyakov V.I.(1998)Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties Semiconductors 32 457-465

[3] Mil’vidskii M.G.(2021)A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition Tech. Phys. Lett. 47 96-98

[4] Chaldyshev V.V.(2019)Cascade solar cells based on GaP/Si/Ge nanoheterostructures Tech. Phys. Lett. 45 7-9

[5] Gudovskikh A.S.(2016)Diffusion of phosphorus in arsenic and boron, doped silicon Usp. Fiz. Nauk 186 801-852

[6] Kudryashov D.A.(2019)Simulation of the concentration dependence of boron diffusion in silicon Mater. Phys. Chem. 1 1-6

[7] Baranov A.I.(1995)Minority-charge-carrier mobility at low injection level in semiconductors Appl. Phys. Lett. 66 1415-1471

[8] Lunin L.S.(2004)Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl Semiconductors 38 258-261

[9] Lunina M.L.(2011) diffusion or ion implantation and annealing Semiconductors 45 436-444

[10] Pashchenko A.S.(2013)A model of high- and low-temperature phosphorus diffusion in silicon by a dual pair mechanism Energy Procedia 38 263-269