Special features of the periodic-pulse-train laser radiation confinement in doped gallium arsenide and zinc selenide

Experimental data on the pulsed laser radiation confinement in compensated GaAs and ZnSe with deep impurity levels are reported for the laser wavelength λ=1.55 μm and a pulse repetition frequency of up to 100 kHz. It is demonstrated that an increase in the pulse repetition rate is accompanied by a decrease in the energy confinement threshold and by an increase in the radiation attenuation coefficient. These effects are explained by the accumulation of nonequilibrium charge carriers related to a dependence of the recombination time constant on the concentration of free impurity centers.