Design Considerations and Optimization of Electrostatic Doped Ferroelectric Nanotube Tunnel FET: Analog and Noise Analysis

This paper proposed the electrostatically doped Ferroelectric Nanotube Tunnel FET (FE-NT-TFET). The proposed device is electrostatically doped, so the applied source voltage is -1.2 V (VS = -1.2 V). Device variables like potential variation, electric-field energy, non-local band to band electron tunnel (BTBT) rates, electron carrier concentration, and hole carrier concentration have been investigating. Analog variables like drain current (IDS), ION/IOFF current ratio, ON current (ION), sub-threshold slope (SS), OFF current (IOFF), a threshold voltage (VTH), and average sub-threshold slope (AVSS) have been discussed. The noise parameter such as real impedance (Z0), minimum noise figure (NF), auto/cross-correlation function (ACF & CCF) has been discussed. To obtain the steep sub-threshold slope (SS) and higher drain current (IDS) ferroelectric material is used in the place of the gate oxide. Ferroelectric material HfO2 is used in the proposed FE-NT-TFET device. HfO2 is used because of compatibility with the CMOS flow. The proposed FE-NT-TFET device shows the higher current 62.4uA/um for VDS = 1.2 V and steep sub-threshold slope (SS) 7 mV/decade. The proposed device shows the average sub-threshold slope (AVSS) 22.9 mV/decade. The proposed FE-NT-TFET device shows the lower OFF current (IOFF) order of 10−19A/um and higher ION/IOFF current order of 1013.