Design Considerations and Optimization of Electrostatic Doped Ferroelectric Nanotube Tunnel FET: Analog and Noise Analysis

被引：0
作者：
Ashok Kumar Gupta
Ashish Raman
Naveen Kumar
机构：
[1] National Institute of Technology,Department of Electronics and Communications, Dr. B. R. Ambedkar
来源：
Silicon | 2022年 / 14卷
关键词：
TFET; Nanowire TFET; Nanotube TFET; Electrostatic doped; Auto-correlation function (ACF); Noise Variation; HfO; Ferroelectric; Cross-correlation function (CCF);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper proposed the electrostatically doped Ferroelectric Nanotube Tunnel FET (FE-NT-TFET). The proposed device is electrostatically doped, so the applied source voltage is -1.2 V (VS = -1.2 V). Device variables like potential variation, electric-field energy, non-local band to band electron tunnel (BTBT) rates, electron carrier concentration, and hole carrier concentration have been investigating. Analog variables like drain current (IDS), ION/IOFF current ratio, ON current (ION), sub-threshold slope (SS), OFF current (IOFF), a threshold voltage (VTH), and average sub-threshold slope (AVSS) have been discussed. The noise parameter such as real impedance (Z0), minimum noise figure (NF), auto/cross-correlation function (ACF & CCF) has been discussed. To obtain the steep sub-threshold slope (SS) and higher drain current (IDS) ferroelectric material is used in the place of the gate oxide. Ferroelectric material HfO2 is used in the proposed FE-NT-TFET device. HfO2 is used because of compatibility with the CMOS flow. The proposed FE-NT-TFET device shows the higher current 62.4uA/um for VDS = 1.2 V and steep sub-threshold slope (SS) 7 mV/decade. The proposed device shows the average sub-threshold slope (AVSS) 22.9 mV/decade. The proposed FE-NT-TFET device shows the lower OFF current (IOFF) order of 10−19A/um and higher ION/IOFF current order of 1013.
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页码：10357 / 10373
页数：16
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