Simulation of deep level traps effects in quantum well transistor laser

被引：0
|
作者：
Ashkan Horri
Rahim Faez
机构：
[1] Islamic Azad University,Young Researchers Club, Arak Branch
[2] Sharif University of Technology,Department of Electrical Engineering
来源：
Journal of Computational Electronics | 2013年 / 12卷
关键词：
Deep level traps (DLTs); Self pulsing; Transistor laser (TL); Quantum efficiency; Threshold current; Semiconductor laser;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analyze is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporate the virtual states as a conversion mechanism.
引用
收藏
页码：812 / 815
页数：3
相关论文
共 50 条
  • [31] Circuit modeling of quantum-well lasers for optoelectronic integrated circuits (ICs) including physical effect of deep-level traps
    Salehi, MR
    Cabon, B
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (11) : 1510 - 1514
  • [32] THEORY OF THE QUANTUM WELL EMISSION TRANSISTOR
    GRINBERG, A
    KASTALSKY, A
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 821 - 829
  • [33] Bipolar transistor with quantum well base
    Mil'shtein, S.
    Churi, A.
    Palma, J.
    MICROELECTRONICS JOURNAL, 2008, 39 (3-4) : 631 - 634
  • [34] Multibandgap quantum well wafers by IR laser quantum well intermixing: simulation of the lateral resolution of the process
    Voznyy, Oleksandr
    Stanowski, Radoslaw
    Dubowski, Jan J.
    JOURNAL OF LASER MICRO NANOENGINEERING, 2006, 1 (01): : 48 - 53
  • [35] LaserCAD III - Software package for quantum well laser simulation
    Ivanov, P
    Sukhoivanov, I
    Lysak, V
    Prigoda, A
    Kokhan, Y
    Zaslonkin, Y
    Shulika, A
    Kublik, A
    EXPERIENCE OF DESIGNING AND APPLICATION OF CAD SYSTEMS IN MICROELECTRONICS, 2001, : 209 - 211
  • [36] The effect of temperature on the operation of quantum well laser: A simulation study based on three-level rate equations
    Leong, Tan Chee
    Vaya, Pukhraj
    FIBER AND INTEGRATED OPTICS, 2006, 25 (06) : 441 - 450
  • [37] NUMERICAL-SIMULATION OF A COUPLED-QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR
    TANIYAMA, H
    TOMIZAWA, M
    YOSHII, A
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5079 - 5086
  • [38] Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base
    Ghosh, Soumava
    Mukhopadhyay, Bratati
    Sen, Gopa
    SEMICONDUCTORS, 2020, 54 (01) : 77 - 84
  • [39] Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base
    Bratati Soumava Ghosh
    Gopa Mukhopadhyay
    Semiconductors, 2020, 54 : 77 - 84
  • [40] Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
    Polyakov, A. Y.
    Haller, C.
    Butte, R.
    Smirnov, N. B.
    Alexanyan, L. A.
    Kochkova, A. I.
    Shikoh, S. A.
    Shchemerov, I. V.
    Chernykh, A. V.
    Lagov, P. B.
    Pavlov, Yu S.
    Carlin, J. -F.
    Mosca, M.
    Grandjean, N.
    Pearton, S. J.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 845
12345