Simulation of deep level traps effects in quantum well transistor laser

被引：0
|
作者：
Ashkan Horri
Rahim Faez
机构：
[1] Islamic Azad University,Young Researchers Club, Arak Branch
[2] Sharif University of Technology,Department of Electrical Engineering
来源：
Journal of Computational Electronics | 2013年 / 12卷
关键词：
Deep level traps (DLTs); Self pulsing; Transistor laser (TL); Quantum efficiency; Threshold current; Semiconductor laser;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analyze is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporate the virtual states as a conversion mechanism.
引用
收藏
页码：812 / 815
页数：3
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