Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED

被引:1
|
作者
Shengjun Zhou
Bin Cao
Sheng Liu
机构
[1] Shanghai Jiao Tong University,Research Institute of Micro/Nano Science and Technology
[2] Huazhong University of Science & Technology,Wuhan National Laboratory for Optoelectronics
[3] Huazhong University of Science & Technology,Institute of Microsystems
来源
Applied Physics A | 2011年 / 105卷
关键词
Mesa Sidewall; Tapered Sidewall; Inductive Coupling Mode;
D O I
暂无
中图分类号
学科分类号
摘要
Inductively coupled plasma (ICP) etching of GaN is systemically investigated by changing ICP power/RF bias power, operating pressure, and Cl2/BCl3 gas mixing ratio. The hexagonal etch pits related to screw dislocation existing along GaN epitaxial layer were observed on the etched GaN surface after ICP etching. The intensity of band-edge emission is significantly reduced from the etched n-GaN surface, which reveals that plasma-induced damage are generated after ICP etching. The oblique sidewall is transferred into GaN using a combination of Cl2/BCl3 plasma chemistry and hard mask SiO2. By adjusting ICP etching process parameters, oblique sidewalls with various oblique angles can be formed, allowing for conformal metal lines coverage across the mesa structures, which can play an important role in the interconnection of multiple microchips for light emitting diodes (LEDs) fabrication.
引用
收藏
页码:369 / 377
页数:8
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