Surface structure of plasma-etched (211)B HgCdTe

被引：0
|
作者：
J. D. Benson
A. J. Stoltz
J. B. Varesi
L. A. Almeida
E. P. G. Smith
S. M. Johnson
M. Martinka
A. W. Kaleczyc
J. K. Markunas
P. R. Boyd
J. H. Dinan
机构：
[1] U.S. Army RDECOM,
[2] CERDEC Night Vision and Electronic Sensors Directorate,undefined
[3] Raytheon Vision Systems,undefined
[4] U.S. Army Research Laboratory,undefined
来源：
Journal of Electronic Materials | 2005年 / 34卷
关键词：
HgCdTe; reflection high-energy electron diffraction (RHEED); plasma etched;
D O I：
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中图分类号：
学科分类号：
摘要：
The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the as-grown Hg-rich molecular beam epitaxy (MBE) (211)B HgCdTe suggests the surface reconstructs by additional Hg incorporation. The plasma-etched (211)B HgCdTe surface is crystalline but stepped and facetted. RHEED analysis indicates asymmetric pyramids (base dimensions ≈0.5×1.1 nm) are formed to minimize surface Hg concentration. The AFM examination of plasma-etched (211)B HgCdTe reveals oriented mesoscopic features.
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页码：726 / 732
页数：6
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