Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

被引：0
|
作者：
A. Brataas
Yu.V. Nazarov
J. Inoue
G.E.W. Bauer
机构：
[1] Delft University of Technology,
[2] Laboratory of Applied Physics and Delft Institute of Microelectronics and Submicrontechnology (DIMES),undefined
[3] 2628 CJ Delft,undefined
[4] The Netherlands,undefined
[5] Philips Research Laboratories,undefined
[6] Prof. Holstlaan 4,undefined
[7] 5656 AA Eindhoven,undefined
[8] The Netherlands,undefined
[9] Nagoya University,undefined
[10] Department of Applied Physics,undefined
[11] Nagoya,undefined
[12] Aichi 46401,undefined
[13] Japan,undefined
来源：
The European Physical Journal B - Condensed Matter and Complex Systems | 1999年 / 9卷
关键词：
PACS. 73.40.Gk Tunneling - 75.70.-i Magnetic films and multilayers - 73.23.Hk Coulomb blockade; single-electron tunneling - 75.70.Pa Giant magnetoresistance;
D O I：
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中图分类号：
学科分类号：
摘要：
We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.
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页码：421 / 430
页数：9
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