Three-dimensional quantum transport simulation of ultra-small FinFETs

被引：0
作者：
Takeda H. [1 ]
Mori N. [1 ]
机构：
[1] Department of Electronic Engineering, Osaka University, Suita City, Osaka 565-0871
来源：
Journal of Computational Electronics | 2005年 / 4卷 / 1-2期
关键词：
FinFET; Interface roughness; Non-equilibrium Green's function method; Phonon scattering; Quantum transport;
D O I：
10.1007/s10825-005-7102-0
中图分类号：
学科分类号：
摘要：
Three-dimensional simulation based on a non-equilibrium Green's function method including electron-phonon interaction and Si/SiO2 interface roughness has been performed for ultra-small FinFETs. Comparing the simulated drain-current-gate-voltage characteristics with those obtained in the ballistic limit, effects of the scatterings on the device characteristics are discussed. Threshold voltage fluctuation is also discussed. © 2005 Springer Science + Business Media, Inc.
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页码：31 / 34
页数：3
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