A study of gaussianity and stationarity of noise in gas-sensitive SnO2 films

被引：0
|
作者：
Ugryumov R.B. [1 ]
Shaposhnik A.V. [1 ]
Voishchev V.S. [1 ]
机构：
[1] K. D. Glinka State Agricultural University of Voronezh, Voronezh
来源：
Radiophysics and Quantum Electronics | 2004年 / 47卷 / 09期
关键词：
SnO2; Surface State; Chemisorption; Quantum Electronics; Nonlinear Optic;
D O I：
10.1007/s11141-005-0007-8
中图分类号：
学科分类号：
摘要：
Chemisorption processes significantly influence the surface states of semiconductor films. It is assumed that these processes should also influence electric-current noise generated by the semiconductor structure. We study stationarity and Gaussianity of the resistance fluctuations of semiconductor gas sensors. It is shown that Gaussianity and stationarity of noise are shown as functions of the gas-phase composition and temperature. On this basis, we conclude that it is in principle possible to increase the selectivity of gas sensors by jointly measuring their sensor and noise characteristics. © 2004 Springer Science+Business Media, Inc.
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页码：702 / 705
页数：3
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