Constraints on the axion-electron coupling constant for solar axions appearing owing to bremsstrahlung and the compton process
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作者:
A. V. Derbin
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机构:Russian Academy of Sciences,Petersburg Nuclear Physics Institute
A. V. Derbin
I. S. Drachnev
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h-index: 0
机构:Russian Academy of Sciences,Petersburg Nuclear Physics Institute
I. S. Drachnev
A. S. Kayunov
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机构:Russian Academy of Sciences,Petersburg Nuclear Physics Institute
A. S. Kayunov
V. N. Muratova
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机构:Russian Academy of Sciences,Petersburg Nuclear Physics Institute
V. N. Muratova
机构:
[1] Russian Academy of Sciences,Petersburg Nuclear Physics Institute
来源:
JETP Letters
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2012年
/
95卷
关键词:
Solar Axion;
JETP Letter;
Silicon Atom;
Photoelectric Effect;
Sensitive Volume;
D O I:
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摘要:
The axio-electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahlung and the Compton process. Axions are detected using a Si(Li) detector placed in a low-background setup. As a result, a model-independent constraint on the axion-electron coupling constant |gAe| ≤ 2.2 × 10−10 has been obtained, which leads to the bounds mA ≤ 7.9 eV and mA ≤ 1.4 eV (at 90% C.L.) for the mass of the axion in the DFSZ and KSVZ models, respectively.