Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

被引：0
|
作者：
Sang Ouk Ryu
Cheul Ho Ha
Ho Young Jun
Si Ok Ryu
机构：
[1] Dankook University,Department of Electronics and Electrical Engineering
[2] Yeungnam University,School of Chemical Engineering
来源：
Journal of Electronic Materials | 2020年 / 49卷
关键词：
Zinc tin oxide; thin film; thin film transistor; inkjet-printer; solution-based process;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, inkjet-printed zinc tin oxide:Cl (ZTO:Cl) thin films were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and all the films were annealed at temperatures ranging from 100°C to 600°C. XPS analysis showed that the formation of metal-oxide bonds in the films was complete with annealing temperatures at or above 500°C. Furthermore, inkjet-printed thin film transistors (TFTs) were examined using scanning electron microscopy and current–voltage characteristic measurements. The ZTO:Cl TFTs performed best when annealed at 500°C. The average carrier mobility and the on/off ratio were found to be 2.71 cm2/V s and 1.82 × 107, respectively.
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页码：2003 / 2007
页数：4
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