Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

被引：0
|
作者：
Sang Ouk Ryu
Cheul Ho Ha
Ho Young Jun
Si Ok Ryu
机构：
[1] Dankook University,Department of Electronics and Electrical Engineering
[2] Yeungnam University,School of Chemical Engineering
来源：
Journal of Electronic Materials | 2020年 / 49卷
关键词：
Zinc tin oxide; thin film; thin film transistor; inkjet-printer; solution-based process;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, inkjet-printed zinc tin oxide:Cl (ZTO:Cl) thin films were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and all the films were annealed at temperatures ranging from 100°C to 600°C. XPS analysis showed that the formation of metal-oxide bonds in the films was complete with annealing temperatures at or above 500°C. Furthermore, inkjet-printed thin film transistors (TFTs) were examined using scanning electron microscopy and current–voltage characteristic measurements. The ZTO:Cl TFTs performed best when annealed at 500°C. The average carrier mobility and the on/off ratio were found to be 2.71 cm2/V s and 1.82 × 107, respectively.
引用
收藏
页码：2003 / 2007
页数：4
相关论文
共 50 条
  • [1] Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing
    Ryu, Sang Ouk
    Ha, Cheul Ho
    Jun, Ho Young
    Ryu, Si Ok
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (03) : 2003 - 2007
  • [2] Inkjet printing of sustainable ZTO/AlOx thin film transistors
    Moreira, Pedro Gabriel
    Martins, Rodrigo
    Carlos, Emanuel
    Branquinho, Rita
    FLEXIBLE AND PRINTED ELECTRONICS, 2024, 9 (04):
  • [3] Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors
    Wang, Chong
    Guo, Liang
    Lei, Mingzhou
    Wang, Chao
    Chu, Xuefeng
    Yang, Fan
    Gao, Xiaohong
    Wamg, Huan
    Chi, Yaodan
    Yang, Xiaotian
    NANOMATERIALS, 2022, 12 (14)
  • [4] Materials System for Inkjet Printing High Performance Thin-Film Transistors
    Zhang, Qi
    Xiang, Huiqing
    Liu, Jianguo
    Zeng, Xiaoyan
    PROGRESS IN CHEMISTRY, 2019, 31 (10) : 1417 - 1424
  • [5] Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate
    Im, In-Ho
    Chung, Kwang-Hyun
    Kim, Duk-Hyun
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2014, 15 (05) : 253 - 256
  • [6] Effect of annealing temperature on the electrical properties of In-Zn-Li-O thin film transistors
    Li, Bin
    Wang, Hailong
    Zhou, Dongzhan
    Hu, Zuofu
    Wu, Huaihao
    Peng, Yunfei
    Yi, Lixin
    Zhang, Xiqing
    Wang, Yongsheng
    SOLID-STATE ELECTRONICS, 2015, 111 : 18 - 21
  • [7] Inkjet printing PVP dielectric for flexible thin film transistor
    Tao Hong
    Luo Hao-de
    Ning Hong-long
    Yao Ri-hui
    Cai Wei
    Zheng Xi-feng
    Wang Yang
    Wang Bo
    Cao Hui
    Peng Jun-biao
    CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS, 2021, 36 (05) : 633 - 640
  • [8] Printing Thin-Film Transistors and Their Applications in Displays
    Lan L.
    Chen B.
    Peng J.
    Cao Y.
    Cao, Yong (yongcao@scut.edu.cn), 1600, Sichuan University (37): : 150 - 156and199
  • [9] Effect of annealing on performance of ZnO thin film transistors
    Yi, Geum Ran
    Kim, Han Sol
    Lee, Do Hyung
    Kim, Bada
    Kim, Chang Kyo
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2019, 678 (01) : 43 - 52
  • [10] Investigation on the Doping Dependence of Solution-Processed Zinc Tin Oxide Thin Film and Thin-Film Transistors
    Jung, C. H.
    Lee, J. Y.
    Pu, L. S.
    Yoon, D. H.
    SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY, 2011, 41 (09) : 1153 - 1157
12345