Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode

被引：0
作者：
V. G. Popov
V. G. Krishtop
O. N. Makarovskii
M. Henini
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology
[2] Moscow Institute of Physics and Technology,undefined
[3] School of Physics and Astronomy of Nottingham University,undefined
来源：
Journal of Experimental and Theoretical Physics | 2010年 / 111卷
关键词：
GaAs; Quantum Well; Tunneling Electron; Weak Magnetic Field; Resonant Tunneling;
D O I：
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中图分类号：
学科分类号：
摘要：
Resonant tunneling of electrons is thoroughly studied in in-plane magnetic fields. Anticrossing is revealed in a spectrum of two-dimensional electrons at energies of optical phonons. The magnetic field changes the momentum of tunneling electrons and causes a voltage shift of a resonance in the tunnel spectra in accordance with the electron dispersion curve. Anticrossing is clearly observed in second derivative current-voltage characteristics of a resonant tunneling diode made of a double-barrier Al0.4Ga0.6As/GaAs heterostructure.
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页码：220 / 224
页数：4
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