Properties of Compliant Substrates Based on Porous Silicon Formed by Two-stage Etching

被引：0
|
作者：
P. V. Seredin
A. S. Len’shin
Ali Obaid Radam
Abduljabbar Riyad Khuder
D. L. Goloshchapov
M. A. Harajidi
I. N. Arsentyev
I. A. Kasatkin
机构：
[1] Voronezh State University,
[2] Ministry of Education/General Directorate of Education in Baghdad,undefined
[3] Ioffe Institute,undefined
[4] St. Petersburg State University,undefined
来源：
Semiconductors | 2022年 / 56卷
关键词：
Si; porous layer; compliant substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Abstract—Our work reports on the influence of etching modes and their combination on the design, microstructural and optical properties of compliant substrates based on porous silicon. It is shown on the basis of the data of a set of microstructural and spectroscopic methods of analysis that at constant lattice parameters, the magnitude of residual stresses, the size of crystallites, the volume of the crystalline fraction, as well as the reflectivity and energy of direct transitions in the porous silicon layer depend on the combination of etching modes, but do not always correlate with the value of the layer porosity calculated from the analysis of SEM images.
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页码：259 / 265
页数：6
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