Photoacoustic spectrum of porous silicon irradiated by light

被引:0
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作者
Toshio Kawahara
Takaharu Kiyotoo
Jun Morimoto
Ritsuyasu Koga
Sinsui Iwane
Kenichi Tahira
Toru Miyakawa
机构
[1] National Defense Academy,Department of Materials Science and Engineering
[2] National Defense Academy,Department of Electronic Engineering
[3] Chiba Institute of Technology,Department of Computer Science
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摘要
The photoacoustic (PA) spectra for the porous silicon samples irradiated during or after anodization are reported. The difference between the spectra for the irradiation conditions is discussed. The light irradiation time dependence of the PA spectra is shown. The irradiation after anodization causes the samples to luminesce in the blue region and enhances the photoluminescence signal intensity around 600 nm. It also reduces the PA signal intensity in the shorter wavelength region. The irradiation during the anodization causes enhancement only in the red-region luminescence.
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页码:4163 / 4166
页数:3
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