1 550 nm long-wavelength vertical-cavity surface emitting lasers

被引：2
|
作者：
Liu L.-J. [1 ,2 ]
Wu Y.-D. [1 ,2 ]
Wang Y. [1 ]
An J.-M. [1 ,2 ]
Hu X.-W. [1 ]
机构：
[1] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
[2] College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing
来源：
Optoelectronics Letters | 2018年 / 14卷 / 5期
关键词：
A;
D O I：
10.1007/s11801-018-8037-6
中图分类号：
学科分类号：
摘要：
A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabricated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1−x−y)As/InP, and 6 strain compensated AlxGayIn(1−x−y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricating 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW operation at room temperature. © 2018, Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature.
引用
收藏
页码：342 / 345
页数：3
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