Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect

被引:0
作者
Q. L. Yang
J. K. Shang
机构
[1] Institute of Metal Research,Shenyang National Laboratory for Materials Science
[2] University of Illinois at Urbana-Champaign,Department of Materials Science and Engineering
来源
Journal of Electronic Materials | 2005年 / 34卷
关键词
Electromigration; solder; interconnect; interface;
D O I
暂无
中图分类号
学科分类号
摘要
Effect of electromigration on the interfacial structure of solder interconnects was examined in a Sn-Bi/Cu interconnect system. At current densities above 104 A/cm2, Bi migrated along the direction of the electron flow in the solder alloy. A continuous Bi layer was found at the solder interface on the anode side, while a Sn-rich region formed at the cathode side of the electrical connection. The presence of the Bi layer inhibited further growth of Cu-Sn intermetallic phase at the interface by acting as a diffusion barrier to the reacting species.
引用
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页码:1363 / 1367
页数:4
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