Conditions for Formation of a Zero Temperature Coefficient of Resistance in Matrix Systems of Metal—Semiconductor

被引：2

作者：

A. G. Andreeva

I. N. Sachkov

A. A. Povzner

机构：

[1] Ural State Technical University,

来源：

Journal of Engineering Physics and Thermophysics | 2001年 / 74卷 / 1期

关键词：

Statistical Physic; Minimum Temperature; Temperature Coefficient; Matrix System; Zero Temperature;

D O I：

10.1023/A:1016615112859

中图分类号：

学科分类号：

摘要：

Using the method of finite elements, the authors have calculated the parameters of a heterophase metal—semiconductor system for which the minimum temperature coefficients of resistance (TCRs) are realized. The temperature‐concentration region in which the TCR acquires values approaching zero has been established.

引用

页码：220 / 223

页数：3

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