Photoluminescence properties of silicon nanocrystals grown by nanosecond laser ablation of solid-state targets in an inert gas atmosphere

被引：0

作者：

M. O. Morozov

I. N. Zavestovskaya

A. V. Kabashin

V. Yu. Timoshenko

机构：

[1] Moscow State University,Faculty of Physics

[2] Russian Academy of Sciences,Lebedev Physical Institute

[3] National Research Nuclear University “MEPhI”,Aix

[4] CNRS,Marseille University

[5] UMR 7341 CNRS,undefined

[6] LP3,undefined

[7] Campus de Luminy,undefined

来源：

Bulletin of the Lebedev Physics Institute | 2017年 / 44卷

关键词：

photoluminescence; exciton; nanocrystals; silicon; laser ablation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It was found that the photoluminescence intensity decay kinetics of nanocrystalline silicon layers formed by nanosecond laser ablation of crystalline silicon targets in a helium atmosphere exhibit a power-law behavior with an exponent from 0.9 to 1.5, depending on the temperature and luminescence photon energy in the range of 1.4–1.8 eV, which indicates photoexcited carrier recombination controlled by dissipative tunneling processes in silicon nanocrystal ensembles in a suboxide matrix.

引用

页码：353 / 356

页数：3

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