Ensemble Monte Carlo Electron Transport Simulation for GaN n+–n–n+ Diode

被引：0
作者：
Baghdadi Berrabah
Choukria Sayah
Souheyla Ferouani
Sofiane Derrouiche
Benyounes Bouazza
机构：
[1] Univ Ctr Ain Temouchent,Smart Structure Laboratory, Institute of Technology
[2] University Abou Bekr Belkaid of Tlemcen,Materials and Renewable Energies Laboratory
来源：
Transactions on Electrical and Electronic Materials | 2021年 / 22卷
关键词：
GaN; Monte Carlo; Poisson equation; Boltzmann equation; Electron velocity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ensemble Monte Carlo simulator is used for solution of Boltzmann transport equation coupling with Poisson equation. We study the electron transport in cubic GaN n+–n–n+ for voltages range from 0.5 to 4 V. In this simulation technique, spatial motion of electron is treated semi-classically and scattering mechanisms included are those due to phonons scattering and ionized impurities scattering. Profile of the electron density, average velocity, kinetic energy, electrostatic potential and electric field are computed. Results are reported for different lattice temperature and various active layer lengths.
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页码：290 / 300
页数：10
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