Increase in individual absorption bands of MgF2 under electron irradiation

被引：0
|
作者：
A. P. Sergeev
P. B. Sergeev
机构：
[1] Russian Academy of Sciences,Lebedev Physical Institute
来源：
Bulletin of the Lebedev Physics Institute | 2011年 / 38卷
关键词：
MgF; defects; induced absorption; individual bands; electron beam;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Decomposition of the induced absorption spectra of a MgF2 crystal into individual bands made it possible to construct the dependences of their intensity, and hence, the intrinsic defect concentration, on the electron beam fluence (energy density). The features of these dependences and their possible consequences are analyzed.
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页码：283 / 286
页数：3
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