机构:University Heights Newark,Department of Mathematical Sciences, Center for Applied Mathematics and Statistics, New Jersey Institute of Technology
G.A. Kriegsmann
B.S. Tilley
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h-index: 0
机构:University Heights Newark,Department of Mathematical Sciences, Center for Applied Mathematics and Statistics, New Jersey Institute of Technology
B.S. Tilley
机构:
[1] University Heights Newark,Department of Mathematical Sciences, Center for Applied Mathematics and Statistics, New Jersey Institute of Technology
[2] Franklin W. Olin College of Engineering,undefined
来源:
Journal of Engineering Mathematics
|
2002年
/
44卷
关键词:
asymptotics;
chemical vapor infiltration;
laminate panels;
microwave heating;
small Biot-number;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
The use of microwaves to heat laminate panels occurs in a variety of industrial processes, from chemical vapor infiltration (CVI) systems to the curing of adhesives in laminate panels. The electrical conductivity of the materials used in these systems is typically temperature-dependent. Characteristically, the thickness of the laminate panel is on the order of wavelength of the incident microwave, but the thickness of the laminate sheet is much smaller. This allows us to apply asymptotic techniques to find averaged wave and heat equations when the direction of the incident microwave is normal to, or tangent to, the laminates. These equations are analyzed in the small-Biot-number limit and are numerically approximated using finite differences. The results are in excellent agreement for small Biot numbers. More importantly, heating trends are observed for a wide variety of volume fractions for two particular CVI applications. In addition, the effect of the incident polarization on the heating process are also established. In particular, the use of a TE polarized incident microwave is shown to be inefficient in certain CVI applications, but produces a more favorable temperature gradient.
机构:
Indian Inst Technol Madras, Dept Chem Engn, Chennai 600036, Tamil Nadu, IndiaIndian Inst Technol Madras, Dept Chem Engn, Chennai 600036, Tamil Nadu, India
Goyal, Himanshu
Sadula, Sunitha
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机构:
Univ Delaware, Delaware Energy Inst, 221 Acad St, Newark, DE 19716 USAIndian Inst Technol Madras, Dept Chem Engn, Chennai 600036, Tamil Nadu, India
Sadula, Sunitha
Vlachos, Dionisios G.
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机构:
Univ Delaware, Delaware Energy Inst, 221 Acad St, Newark, DE 19716 USA
Univ Delaware, Dept Chem & Biomol Engn, 150 Acad St, Newark, DE 19716 USAIndian Inst Technol Madras, Dept Chem Engn, Chennai 600036, Tamil Nadu, India
机构:
Indian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, IndiaIndian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, India
Shukla, A. K.
Mondal, A.
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机构:
Indian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, IndiaIndian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, India
Mondal, A.
Upadhyaya, A.
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机构:
Indian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, IndiaIndian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, India