Nonlinear intersubband transitions in asymmetric double quantum wells as dependent on intense laser field

被引:0
作者
Emine Ozturk
机构
[1] Cumhuriyet University,Department of Physics
来源
Optical and Quantum Electronics | 2016年 / 48卷
关键词
Asymmetric double quantum wells; Electronic and optical properties; Linear and nonlinear transitions; Intense laser field;
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摘要
In this study, for asymmetric double quantum well (ADQW) the linear and nonlinear intersubband optical absorption coefficients and the refractive index changes are examined as dependent on the intense laser field (ILF). The obtained results display that the location and the size of all absorption coefficients and refractive index change depend on ILF and the asymmetric parameter. Also, I showed that ILF provides an important effect on the electronic and optical properties of ADQW, and the changes of the energy levels and the dipole moment matrix elements are dependent on the shape of the confinement potential. Such effects can supply methods to drive tunable semiconductor lasers, which may be tailored by quantum potential well parameters and ILF values.
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[1]  
Ahn D(1987)Calculation of linear and nonlinear intersubband optical absorptions in a quantum model with an applied electric field IEEE J. Quantum Electron. 23 2196-2204
[2]  
Chuang SL(2008)Nonlinear optical rectification in asymmetric double triangular quantum wells Eur. Phys. J. B 66 227-233
[3]  
Chen B(2009)Simultaneous effects of pressure and laser field on donors in GaAs/Ga Phys. E 41 1386-1392
[4]  
Guo KX(1985)Al Phys. Rev. B 31 913-918
[5]  
Wang RZ(1992)As quantum wells Phys. Stat. Sol. B 173 381-388
[6]  
Zheng YB(1999)Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/Ga Phys. E 5 27-35
[7]  
Li B(2007)Al Eur. Phys. J. B 55 283-288
[8]  
Eseanu N(2011)As quantum-well structures J. Lumin. 131 1502-1509
[9]  
Niculescu EC(2014)Tunneling through single AlGaAs barriers Phys. B 452 131-135
[10]  
Burileanu LM(2000)Study of intersubband transition in quantum dots and quantum dot infrared photodetectors J. Appl. Phys. 88 2671-2676