共 285 条
[1]
Millán J(2014)A survey of wide bandgap power semiconductor devices IEEE Trans. Power Electron. 29 2155-2163
[2]
Godignon P(2020)A review of switching oscillations of wide bandgap semiconductor devices IEEE Trans. on Power Electron. 35 13182-13199
[3]
Perpiñà X(2014)Wide bandgap technologies and their implications on miniaturizing power electronic systems IEEE J. Emerg. Sel. Topics Power Electron. 2 374-385
[4]
Pérez-Tomás A(2020)Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, Cascode JFETs and IGBTs IEEE Trans. Ind. Electron. 67 7375-7385
[5]
Rebollo J(2016)Review of commercial GaN power devices and GaN-Based converter design challenges IEEE J. Emerg. Sel. Topics Power Electron. 4 707-719
[6]
Chen J(2017)Review of silicon carbide power devices and their applications IEEE Trans. Ind. Electron. 64 8193-8205
[7]
Du X(2017)Power electronic semiconductor materials for automotive and energy saving applications – SiC, GaN, Ga2O3, and diamond J. Inorg. General Chem. 643 1312-1322
[8]
Luo Q(1989)Optimum semiconductors for high-power electronics IEEE Trans. Electron Devices. 36 1811-1823
[9]
Zhang X(2014)Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration IEEE Trans. Power Electron. 29 1986-1997
[10]
Sun P(2016)Short-circuit protection circuits for silicon-carbide power transistors IEEE Trans. Ind. Electron. 63 1995-2004