Review of wide band-gap technology: power device, gate driver, and converter design

被引:0
作者
Krishna Ravinchandra
Tan Kheng Suan Freddy
June-Seok Lee
Kyo-Beum Lee
Homer Alan Mantooth
Vinesh Thiruchelvam
Jerome Ignatius Yuen Yi Xian
机构
[1] Asia Pacific University,School of Engineering
[2] Dankook University,School of Electronics and Electrical Engineering
[3] Ajou University,Department of Electrical and Computer Engineering
[4] University of Arkansas,Electrical Engineering
来源
Journal of Power Electronics | 2022年 / 22卷
关键词
Wide bandgap; Silicon carbide; Gallium nitride; Cascode;
D O I
暂无
中图分类号
学科分类号
摘要
This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material level to system level. The properties of semiconductor materials, i.e., silicon carbide and gallium nitride, were investigated. The electrical characteristics of commercial power devices, which include static and dynamic performances, were assessed, and compared. The design requirements of WBG gate drivers were then underpinned, and various gate driver topologies were reviewed. Finally, their implementation in power electronic converters and performances were evaluated.
引用
收藏
页码:1398 / 1413
页数:15
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