Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation

被引：0
作者：
XiaoYu Pan
HongXia Guo
YaHui Feng
YiNong Liu
JinXin Zhang
Zhuang Li
YinHong Luo
FengQi Zhang
Tan Wang
Wen Zhao
LiLi Ding
JingYan Xu
机构：
[1] Tsinghua University,The Key Laboratory of Particle and Radiation Imaging, Ministry of Education, Department of Engineering Physics
[2] Northwest Institute of Nuclear Technology,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect
[3] Xiangtan University,School of Materials Science and Engineering
[4] Xidian University,School of Aerospace Science and Technology
[5] The 38th Research Institute of China Electronics Technology Group Corporation,undefined
来源：
Science China Technological Sciences | 2022年 / 65卷
关键词：
silicon-germanium HBT; single-photon absorption; TCAD simulation; single event transient;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is investigated. The laser wavelength and bias condition have been proven to have significant impacts on the characterization of the single event transient (SET) response of the device by two-dimensional (2-D) raster scanning. After optical analytical calculation, the laser-induced charge distribution is well-embedded in the 3-D TCAD process simulation conducted to explore the underlying physical mechanism. In addition to the ion shunt effect, the excess electron injection from the emitter to the base could play a vital role in the SET peak amplitude and charge collection. The impact of the metal layer on the SPA experimental results is also determined by establishing a figure of merit that will help researchers estimate the laser-induced transient sensitivity of devices with metal layer blocking.
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页码：1193 / 1205
页数：12
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