Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes

被引：0
作者：
D. E. Nikolichev
A. V. Boryakov
S. Yu. Zubkov
R. N. Kryukov
M. V. Dorokhin
A. V. Kudrin
机构：
[1] Nizhni Novgorod State University,
来源：
Semiconductors | 2014年 / 48卷
关键词：
GaAs; Manganese Oxide; Quantum Well; Anomalous Hall Effect; Relative Sensitivity Factor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The technique of X-ray photoelectron spectroscopy combined with ion profiling is used for the quantitative chemical analysis of the structure of spin light-emitting diodes with a GaMnAs spin-injection layer and an InGaAs quantum well. The depth distribution of phases is determined, and the causes of redistribution of the phases are clarified. In the spin-injection layer, the fractions of antiferromagnetic Mn and ferromagnetic MnAs are at the same level. The procedure for phase separation and verification of the correctness of determination of the content of components is improved.
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页码：815 / 820
页数：5
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