Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

被引：0
作者：
V. Aggarwal
Sudhanshu Gautam
Urvashi Varshney
A. K. Mauraya
Rahul Kumar
G. Gupta
Ramakrishnan Ganesan
M. Senthil Kumar
S. S. Kushvaha
机构：
[1] CSIR-National Physical Laboratory,Department of Chemistry
[2] Academy of Scientific and Innovative Research (AcSIR),undefined
[3] Birla Institute of Technology and Science (BITS),undefined
[4] Pilani,undefined
来源：
Journal of Materials Research | 2023年 / 38卷
关键词：
GaN; Nanowall network; Laser molecular beam epitaxy; High-resolution X-ray diffraction; Raman spectroscopy; X-ray photoelectron spectroscopy; Field emission scanning electron microscopy; Ultra-violet photodetectors; Sapphire (11–20);
D O I：
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中图分类号：
学科分类号：
摘要：
引用
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页码：429 / 438
页数：9
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