Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

被引：0
作者：
Selvaraj Seenivasan
Kyu In Shim
Chaesung Lim
Thangavel Kavinkumar
Amarnath T. Sivagurunathan
Jeong Woo Han
Do-Heyoung Kim
机构：
[1] Chonnam National University,School of Chemical Engineering
[2] Pohang University of Science and Technology (POSTECH),Division of Environmental Science and Engineering
[3] Pohang University of Science and Technology (POSTECH),Department of Chemical Engineering
来源：
Nano-Micro Letters | 2023年 / 15卷
关键词：
Pseudo-capacitance; Negative electrode; Supercapattery; Atomic layer deposition; Energy density;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Incorporation of Schottky Junction increases the pseudocapacitive mechanism at higher current rate.The pseudocapacitance behavior of the positive and negative electrodes is balanced to construct a solid-state supercapattery device.An energy density of 236.14 Wh kg−1 is achieved for solid-state supercapattery device.
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