Evidence of the fractional quantum spin Hall effect in moiré MoTe2

被引:51
|
作者
Kang, Kaifei [1 ]
Shen, Bowen [1 ]
Qiu, Yichen [2 ]
Zeng, Yihang [2 ]
Xia, Zhengchao [1 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [3 ]
Shan, Jie [1 ,2 ,4 ]
Mak, Kin Fai [1 ,2 ,4 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14850 USA
[2] Cornell Univ, Dept Phys, Ithaca, NY 14850 USA
[3] Natl Inst Mat Sci, Tsukuba, Japan
[4] Cornell Nanoscale Sci, Kavli Inst, Ithaca, NY 14850 USA
关键词
CHERN INSULATORS;
D O I
10.1038/s41586-024-07214-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap similar to an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities(1,2,3,4,5,6). So far, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G(0) = e(2)/h (with e and h denoting the electron charge and Planck's constant, respectively)(7,8,9,10,11,12,13,14). Here we report transport evidence of a fractional QSH insulator in 2.1 degrees twisted bilayer MoTe2, which supports spin-S-z conservation and flat spin-contrasting Chern bands(15,16). At filling factor nu = 3 of the moir & eacute; valence bands, each edge contributes a conductance 3/2G(0) with zero anomalous Hall conductivity. The state is probably a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Furthermore, at nu = 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G(0), 2G(0) and 3G(0), respectively. Our results open up the possibility of realizing time-reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moir & eacute; materials(17,18,19).
引用
收藏
页码:522 / 526
页数:15
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