Giant magnetoresistance in the variable-range hopping regime

被引:0
|
作者
L. B. Ioffe
B. Z. Spivak
机构
[1] Université Pierre et Marie Curie,LPTHE
[2] Rutgers University,Department of Physics
[3] University of Washington,Department of Physics
来源
Journal of Experimental and Theoretical Physics | 2013年 / 117卷
关键词
Localization Length; Giant Magnetoresistance; Negative Magnetoresistance; Plane Field; Spin Glass State;
D O I
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中图分类号
学科分类号
摘要
We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.
引用
收藏
页码:551 / 569
页数:18
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