Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

被引：0
|
作者：
Baowei Qiao
Jie Feng
Yunfeng Lai
Yanfei Cai
Yinyin Lin
Tingao Tang
Bingchu Cai
Bomy Chen
机构：
[1] Shanghai Jiaotong University,National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro and Nano Science and Technology
[2] Fudan University,State Key Laboratory of ASIC & System
[3] Silicon Storage Technology,undefined
[4] Inc.,undefined
来源：
Journal of Electronic Materials | 2007年 / 36卷
关键词：
Phase-change memory; SiSbTe; RESET current; Multibit storage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The switching characteristics of the electrical phase-change memory device using a SiSbTe film were studied. The SiSbTe film has a wider variation of electrical resistivity (up to 107 times) along with crystallization than that of the conventionally used Ge2Sb2Te5 film, and the SiSbTe film crystallizes predominantly into the hexagonal phase in a manner similar to the Sb2Te3 phase. The threshold voltage of the device is 5.87 V. The device was successfully operated with a 100 ns–5.5 V pulse for setting and a 20 ns–3 V pulse for resetting. The RESET current is about 1.37 mA, and the programming energies for resetting and setting are about 110 pJ and 60 pJ, respectively. More than 100 cycles were achieved with a RESET/SET resistance ratio higher than 50. In addition, multiple stable resistance stages can be obtained by adjusting the SET pulse, which makes multibit storage per cell possible.
引用
收藏
页码：88 / 91
页数：3
相关论文
共 50 条
  • [1] Phase-change memory device using Si-Sb-Te film for low power operation and multibit storage
    Qiao, Baowei
    Feng, Jie
    Lai, Yunfeng
    Cai, Yanfei
    Lin, Yinyin
    Tang, Tingao
    Cai, Bingchu
    Chen, Bomy
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (01) : 88 - 91
  • [2] Si-Sb-Te films for phase-change random access memory
    Qiao, Baowei
    Feng, Jie
    Lai, Yunfeng
    Cai, Yanfei
    Lin, Yinyin
    Tang, Ting-ao
    Cai, Bingchu
    Chen, Bomy
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) : 1073 - 1076
  • [3] Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory Applications
    Wu, Liangcai
    Zhou, Xilin
    Song, Zhitang
    Zhu, Min
    Cheng, Yan
    Rao, Feng
    Song, Sannian
    Liu, Bo
    Feng, Songlin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) : 4423 - 4426
  • [4] Characteristics of Si-Sb-Te films for phase change memory
    Feng, Jie
    Zhang, Yin
    Qiao, Baowei
    Cai, Yanfei
    Lin, Yinyin
    Tang, Tingao
    Cai, Bingchu
    Chen, Bomy
    CHALCOGENIDE ALLOYS FOR RECONFIGURABLE ELECTRONICS, 2006, 918 : 87 - +
  • [5] Si-Sb-Te materials for phase change memory applications
    Rao, Feng
    Song, Zhitang
    Ren, Kun
    Zhou, Xilin
    Cheng, Yan
    Wu, Liangcai
    Liu, Bo
    NANOTECHNOLOGY, 2011, 22 (14)
  • [6] Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory
    Zhou, Xilin
    Wu, Liangcai
    Song, Zhitang
    Cheng, Yan
    Rao, Feng
    Ren, Kun
    Song, Sannian
    Liu, Bo
    Feng, Songlin
    ACTA MATERIALIA, 2013, 61 (19) : 7324 - 7333
  • [7] Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory
    Zhou, Xilin
    Wu, Liangcai
    Song, Zhitang
    Rao, Feng
    Ren, Kun
    Peng, Cheng
    Liu, Bo
    Yao, Dongning
    Feng, Songlin
    Chen, Bomy
    THIN SOLID FILMS, 2011, 520 (03) : 1155 - 1159
  • [8] Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current
    Lin, Y. Y.
    Lv, H. B.
    Zhou, P.
    Yin, M.
    Liao, F. F.
    Cai, Y. F.
    Tang, T. A.
    Feng, J.
    Zhang, Y.
    Zhang, Z. F.
    Qiao, B. W.
    Lai, Y. F.
    Cai, B. C.
    Chen, B.
    2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP, 2007, : 61 - +
  • [9] Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory
    Feng, J.
    Zhang, Z. F.
    Zhang, Y.
    Cai, B. C.
    Lin, Y. Y.
    Tang, T. A.
    Chen, Bomy
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [10] Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory
    Ma, Yadong
    Lu, Yegang
    Li, Zengguang
    Shen, Xiang
    Wang, Guoxiang
    Liu, Yongxing
    Dai, Shixun
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (03) : P160 - P163
12345