Synthesis of thin tantalum films by magnetron sputtering

A technique for the synthesis of thin (of about 1 nm) continuous tantalum films on the surface of insulating (sapphire) or conducting (n-GaAs) substrates by magnetron sputtering of a thick (of about 10 nm) film with subsequent etching in argon plasma to the needed thickness is proposed. The conditions of deposition of films and their etching rate are determined. It is demonstrated that the obtained films remain continuous down to a thickness of about 1 nm.