Study of zinc impurity atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by emission Mössbauer spectroscopy

被引:0
作者
N. P. Seregin
S. A. Nemov
S. M. Irkaev
机构
[1] St. Petersburg State Technical University,Institute for Analytical Instrumentation
[2] Russian Academy of Sciences,undefined
来源
Semiconductors | 2002年 / 36卷
关键词
Spectroscopy; Zinc; Arsenic; GaAs; Gallium;
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摘要
The Mössbauer spectra of 67Ga(67Zn) and 67Cu(67Zn) impurity atoms in the bulk of GaP, GaAs, and GaSb samples correspond to isolated zinc centers at Ga sites. The observed shift of the spectral centers of gravity to higher positive velocities at the transition from p-to n-type samples corresponds to the recharging of a shallow zinc impurity center. Mössbauer spectra of 67Cu(67Zn) impurities at the surface of samples represent a superposition of spectra corresponding to isolated zinc centers at gallium sites with those corresponding to zinc associates with an arsenic vacancy.
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页码:975 / 976
页数:1
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