Study of zinc impurity atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by emission Mössbauer spectroscopy
被引:0
作者:
N. P. Seregin
论文数: 0引用数: 0
h-index: 0
机构:St. Petersburg State Technical University,Institute for Analytical Instrumentation
N. P. Seregin
S. A. Nemov
论文数: 0引用数: 0
h-index: 0
机构:St. Petersburg State Technical University,Institute for Analytical Instrumentation
S. A. Nemov
S. M. Irkaev
论文数: 0引用数: 0
h-index: 0
机构:St. Petersburg State Technical University,Institute for Analytical Instrumentation
S. M. Irkaev
机构:
[1] St. Petersburg State Technical University,Institute for Analytical Instrumentation
[2] Russian Academy of Sciences,undefined
来源:
Semiconductors
|
2002年
/
36卷
关键词:
Spectroscopy;
Zinc;
Arsenic;
GaAs;
Gallium;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
The Mössbauer spectra of 67Ga(67Zn) and 67Cu(67Zn) impurity atoms in the bulk of GaP, GaAs, and GaSb samples correspond to isolated zinc centers at Ga sites. The observed shift of the spectral centers of gravity to higher positive velocities at the transition from p-to n-type samples corresponds to the recharging of a shallow zinc impurity center. Mössbauer spectra of 67Cu(67Zn) impurities at the surface of samples represent a superposition of spectra corresponding to isolated zinc centers at gallium sites with those corresponding to zinc associates with an arsenic vacancy.